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Silicon Carbide Design Center

Standard Packaging for SiC Modules


Large bandgap energy and high field breakdown are two primary characteristics of silicon carbide (SiC) which have been leveraged to create a new generation of power semiconductors with zero reverse recovery charge, significantly lower switching losses and the opportunity for higher temperature operation.

Powerex packages SiC MOSFETs and Schottky barrier diodes from leading suppliers into high performance all SiC modules or with high frequency silicon IGBTs into hybrid Si / SiC modules. The new low profile split dual package features low inductance and either a copper or AlSiC baseplate for high thermal cycling applications.

Package Configuration

Product Package Dimensions

Split Dual Hybrid Si/SiC
QID1210005, Split Dual IGBT, 1200V, 100A
QID1210006, Split Dual IGBT, 1200V, 100A

All SiC
QJD1210SB2, Split Dual MOSFET, 1200V, 100A
QJD1760SB1, Split Dual MOSFET, 1700V, 540A

For more information:
phone: 724-925-7272, Option 3 (Applications Engineering Assistance)


  • PV Inverters
  • UPS
  • High speed motor drives
  • Induction heating
  • Welding
  • Military & Aerospace power converters
  • Medical imaging amplifiers
  • Electric vehicle
  • Boost converters

Product Advantages

  • Significant reduction in switching losses
  • Increased system efficiency
  • High temperature operation
  • Higher operating frequency
  • Reduced cooling requirements
  • Zero reverse recovery current from diode
  • Low parasitic inductance
  • Reduced system size / high power density


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