Sign In
Get Answers
Business Support Tools

Silicon Carbide Design Center

Full SiC & Hybrid SiC IGBTs Line Up

Features

QID1210005, QID1210006

  • Low ESW(off)
  • Aluminum Nitride Isolation
  • Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode
  • Low Internal Inductance
  • 2 Individual Switches per Module
  • Isolated Baseplate for Easy Heat Sinking
  • Automated Assembly Assures High Reliability
  • NFH Silicon IGBTs

QJD1210010, QJD1210011

  • Junction Temperature: 175°C
  • Silicon Carbide Chips
  • Low Internal Inductance
  • Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode
  • High Speed Switching
  • Low Switching Losses
  • Low Capacitance
  • High Power Density
  • Isolated Baseplate
  • Aluminum Nitride Isolation
  • 2 Individual Switches per Module
For more information:
email: globalsales@pwrx.com
phone: 724-925-7272, Option 3 (Applications Engineering Assistance)