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    Silicon Carbide Design Center

    Parametric Search Technical Center
    OVERVIEW
    FEATURES
    ADVANTAGES
    Advantages of Reduction in Module Power Loss
    Standard Packaging for SiC Modules
    APPLICATIONS
    Type
    Full SiC ModulesHybrid Si/SiC ModulesGate Driver for Full SiC Module
    Voltage
    650V1200V1700V2200V3300V10000V
    Current
    0-100A101-600A601-1200A
    Circuit Configuration
    3 Phase BridgeCommon AnodeCommon CathodeSingleDual6-PACSplit DualHalf Bridge
    Technical Documents
    SiC New Products
    Eurosatory 2022
    Designing a Custom Module

    Solid State Circuit Breaker Application

    *click breakers to review devices specifications

    For more information:
    email: globalsales@pwrx.com
    phone: 724-925-7272, Option 3 (Applications Engineering Assistance)
    Manufactured in our ISO 9001 certified manufacturing centers: ISO 9001:2015 and AS9100D

    Silicon Carbide MOSFETS 900V-6.5kV

    • Lower on-state resistance
    • Lower losses
    • Higher temperature

    The Smart Switch

    • Reduce power fluctuations
    • Fast interrupt of extreme current
    • Longer reliability Less cooling requirements

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