Applications
- PV inverters
- UPS
- High speed motor drives
- Induction heating
- Welding
- Aerospace power converters
- Medical imaging amplifiers
- Electric vehicle
- Boost converters
Product Advantages
- Significant reduction in switching losses
- Increased system efficiency
- High temperature operation
- Higher operating frequency
- Reduced cooling requirements
- Low parasitic inductance
- Reduced system size / high power density
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Next Generation of Power Semiconductors using Mitsubishi Silicon Carbide
Overview
Large bandgap energy and high field breakdown are two primary characteristics of silicon carbide (SiC) which have been leveraged to create a new generation of power semiconductors with zero reverse recovery charge, significantly lower switching losses and the opportunity for higher temperature operation.
Powerex packages SiC MOSFETs and Schottky barrier diodes from Mitsubishi into high performance all SiC modules or with high frequency silicon IGBTs into hybrid Si / SiC modules. The new low profile split dual package features low inductance and either a standard copper or AlSiC baseplate for high thermal cycling applications.
Diodes in both the MOSFET or hybrid version are Mitsubishi Silicon Carbide (SiC) Schottky diode chips.
Package Configuration
Product Package Dimensions
Product Line-up
Split Dual Hybrid Si/SiC
QID1210007, Cu Baseplate Split Dual, 1200V, 100A
QID1215003, Cu Baseplate Split Dual, 1200V, 150A
All SiC
QJD1210SA1, Cu Baseplate Split Dual MOSFET, 1200V, 100A
QJD1210SA2, AlSiC Baseplate Split Dual MOSFET, 1200V, 100A
Features
QID1210007, QID1215003
- Low ESW(off)
- Aluminum Nitride Isolation
- Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode, 75A or 150A
- High Frequency Silicon from Mitsubishi using NFH IGBT Technology
- Automated Assembly Assures High Reliability
- Low Internal Inductance
- 2 Individual Switches per Module
- Isolated Baseplate for Easy Heat Sinking
- AlSiC Baseplate Available upon Request
QJD1210SA1, QJD1210SA2
- Low Internal Inductance
- Industry Leading RDS(on)
- High Speed Switching
- Low Switching Losses
- Low Capacitance
- Low Drive Requirement
- Fast 75A Free Wheeling Schottky Diode
- High Power Density
- Isolated Baseplate
- Aluminum Nitride Isolation
- 2 Individual Switches per Module
- RoHS Compliant
For more information:
email: globalsales@pwrx.com
phone: 724-935-7272, Option 3 (Applications Engineering Assistance)
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